| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2009-11-24 |
| タイトル |
|
|
タイトル |
Raman Scattering Characterization of Annealed GaN_xAs_<1-x> Layers |
| 言語 |
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|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
GaN_xAs_<1-x> |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Raman scattering |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
natural superlattice cluster |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
thermal annealing |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
N-H bond |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_1843 |
|
資源タイプ |
other |
| 著者 |
FURUHATA, Takashi
KITANO, Takeshi
MAGARA, Hiroyuki
MASUDA, Atsushi
TANAKA, So
MOTO, Akihiro
TAKAHASHI, Mitsuo
TANABE, Tatsuya
TAKAGISHI, Shigenori
YAMAMOTO, Akio
HASHIMOTO, Akihiro
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Raman scattering from the GaN_xAs_<l-x> layers grown on the (001) GaAs substrates has been investigated to characterize the locally ordered structures in the grown layers. New optical phonon modes from the confined GaAs and GaN structures and the disorder activated modes were observed. These new modes strongly suggest the presence of the trigonal {111}-(GaN)_1(GaAs)_1 natural superlattice cluster in the GaN_xAs<l-x> layers. A thermal annealing effect has been also investigated through the variation of the confined GaAs- and the GaN-like modes and we have confirmed that the hydrogen (H) atoms included in the as-grown GaN_xAs_<1-x> layers desorb from the layers by the annealing. The results strongly indicate that the H-induced degradation in the natural superlattice cluster are recovered through breaking of the N-H bonds by the annealing. |
| 書誌情報 |
Proceedings of International Workshop on Nitride Semiconductors
p. 673-676,
発行日 2009-11-30
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| 出版者 |
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出版者 |
The Institute of Pure and Applied Physics |
| 書誌レコードID |
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識別子タイプ |
NCID |
|
|
関連識別子 |
TD00006630 |
IPAP_Conf._Series_1_p.673-676.pdf (257.0 kB)
