{"created":"2023-05-15T10:27:01.627567+00:00","id":22314,"links":{},"metadata":{"_buckets":{"deposit":"8f4e7007-1f55-4cfe-98c0-ea0e37fd1dce"},"_deposit":{"created_by":1,"id":"22314","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"22314"},"status":"published"},"_oai":{"id":"oai:u-fukui.repo.nii.ac.jp:00022314","sets":["2403:2404"]},"author_link":["64307","64312","64310","64314","64311","64308","64313","64316","64315","64309"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"053525-4","bibliographicPageStart":"053525-1","bibliographicVolumeNumber":"106","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, the effects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction are investigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e., enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorily shown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1-xN can be tuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation are analyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we propose a phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TD00006761","subitem_relation_type_select":"NCID"}}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.3212969","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"康, 亭亭"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"山本, 政智"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"田中, 幹康"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"橋本, 明弘"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"山本, 暠勇"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"KANG, Ting-Ting","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"YAMAMOTO, Masatomo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"TANAKA, Mikiyasu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"HASHIMOTO, Akihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"YAMAMOTO, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-08-04"}],"displaytype":"detail","filename":"J.Applied_.Physics_Vol.106..pdf","filesize":[{"value":"550.0 kB"}],"format":"application/pdf","license_note":"American Institute of Physics","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"J.Applied_.Physics_Vol.106..pdf","url":"https://u-fukui.repo.nii.ac.jp/record/22314/files/J.Applied_.Physics_Vol.106..pdf"},"version_id":"aa7c6f72-1adb-4ab2-811c-a94c53689b97"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"other","resourceuri":"http://purl.org/coar/resource_type/c_1843"}]},"item_title":"Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition"}]},"item_type_id":"10001","owner":"1","path":["2404"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-10-09"},"publish_date":"2009-10-09","publish_status":"0","recid":"22314","relation_version_is_last":true,"title":["Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T13:03:13.816963+00:00"}