{"created":"2023-05-15T10:27:01.585169+00:00","id":22313,"links":{},"metadata":{"_buckets":{"deposit":"5fd75653-0d85-4832-a33a-ef1d3ba154a8"},"_deposit":{"created_by":1,"id":"22313","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"22313"},"status":"published"},"_oai":{"id":"oai:u-fukui.repo.nii.ac.jp:00022313","sets":["2403:2404"]},"author_link":["64303","64302","64304","64306","64305"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-02","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"4","bibliographicPageStart":"1","bibliographicVolumeNumber":"2015","bibliographic_titles":[{"bibliographic_title":"Physica Status Solidi (b)"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This paper reports the post-growth annealing effects of low-temperature grown Mg-doped InGaN. By using MOVPE, 1?μm-thick Mg-doped InxGa1?xN (x?~?0.36) films are grown at 570?°C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650?°C for 20?min, the InGaN film is phase-separated. On the other hand, the RTA at a temperature higher than 700?°C enables us to get p-type samples. By using the RTA at 850 for 20?s, p-type samples with a hole concentration 1018?1019?cm?3 are successfully obtained without phase separation.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley-VCH Verlag"}]},"item_10001_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TD00006760","subitem_relation_type_select":"NCID"}}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1002/pssb.201451736","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"3701972","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamamoto, A."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hasan, Md. T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kodama, K."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shigekawa, N."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kuzuhara, M."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-08-04"}],"displaytype":"detail","filename":"1000935166.pdf","filesize":[{"value":"679.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1000935166.pdf","url":"https://u-fukui.repo.nii.ac.jp/record/22313/files/1000935166.pdf"},"version_id":"be7b439d-b9e1-4b58-9296-5a12c6455bc8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"annealing","subitem_subject_scheme":"Other"},{"subitem_subject":"doping","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaN","subitem_subject_scheme":"Other"},{"subitem_subject":"magnesium","subitem_subject_scheme":"Other"},{"subitem_subject":"MOVPE","subitem_subject_scheme":"Other"},{"subitem_subject":"phase separation","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"other","resourceuri":"http://purl.org/coar/resource_type/c_1843"}]},"item_title":"Thick (~1um) p-type InxGa1?x N (x ~ 0.36) grown by MOVPE at a low temperature (~570C)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Thick (~1um) p-type InxGa1?x N (x ~ 0.36) grown by MOVPE at a low temperature (~570C)"}]},"item_type_id":"10001","owner":"1","path":["2404"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-31"},"publish_date":"2015-03-31","publish_status":"0","recid":"22313","relation_version_is_last":true,"title":["Thick (~1um) p-type InxGa1?x N (x ~ 0.36) grown by MOVPE at a low temperature (~570C)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T13:03:15.583352+00:00"}