@misc{oai:u-fukui.repo.nii.ac.jp:00022313,
 author = {Yamamoto, A. and Hasan, Md. T. and Kodama, K. and Shigekawa, N. and Kuzuhara, M.},
 month = {Feb},
 note = {This paper reports the post-growth annealing effects of low-temperature grown Mg-doped InGaN. By using MOVPE, 1?μm-thick Mg-doped InxGa1?xN (x?~?0.36) films are grown at 570?°C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650?°C for 20?min, the InGaN film is phase-separated. On the other hand, the RTA at a temperature higher than 700?°C enables us to get p-type samples. By using the RTA at 850 for 20?s, p-type samples with a hole concentration 1018?1019?cm?3 are successfully obtained without phase separation.},
 title = {Thick (~1um) p-type InxGa1?x N (x ~ 0.36) grown by MOVPE at a low temperature (~570C)},
 year = {2015}
}